Samsung Breaks New Ground in Memory With 10-Nanometer, 8-GB DRAM Chip

Samsung developed a third-generation 10-nanometer (1z-nm) 8-GB Double Data Rate 4 (DDR4) DRAM, a first for the memory market, it said. Mass production of the 1z-nm 8GB DDR4 will begin in the second half for enterprise servers and high-end PCs to be launched next year, it said. Subsequent 1z-nm products with higher capacities and performance will target servers, graphics and mobile devices, it said.